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| BC817W Elektronische Bauelemente RoHS Compliant Product NPN Transistor Epitaxial Planar Transistor Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations High Collector Current High Current Gain Low Collector-Emitter Saturation Voltage REF. A A1 A2 D E HE Min. 0.80 0 0.80 1.80 1.15 1.80 Millimeter Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Millimeter ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO Collector-Base Voltage Ta=25oC Parameter Value 50 45 5 800 225 -55~+150 Units V V V mA mW O IC PD TJ,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature o C ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specifie Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVCEO BVEBO ICES IEBO *VCE(sat) *VBE(sat) *hFE1 fT Cob Min 50 45 50 5 100 - Typ. 100 - Max - Unit V V V V nA nA mV V Test Conditions IC= 100 A IC= 10mA IC= 100 A IE= 100 A VCE= 25V VEB=4V IC=500mA,IB=50mA VCE= 1 V, IC=100mA VCE= 1 V, IC=100mA VCE= 5V, IC= 10mA,f=100MHz VCB=10V , f=1MHz,IE=0A *Pulse widthO380s, Duty CycleO 2% 100 100 700 1.2 630 12 MH z pF Classification of hFE Rank Range Marking A 100~250 8FA,6A B 160~400 8 FB,6B C 250~630 8FC,6C http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 BC817W Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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